The Taiwan Semiconductor Manufacturing Company (TSMC) has finally revealed the details of its 2nm process technology at the IEEE International Electron Devices Meeting (IEDM). The new process uses a GAA (Gate-All-Around) nanosheet transistor architecture, which provides better current control and performance optimization capabilities.

According to the testing data, the 2nm process has achieved a 1.15-fold increase in transistor density, with a 24-35% reduction in power consumption and a 15% improvement in performance. The SRAM density has reached a record-breaking 37.9Mb/mm^2. TSMC plans to mass-produce the 2nm process in the second half of 2025, with initial prices ranging from $25,000 to $30,000 per wafer. The first batch of customers may include Apple, Qualcomm, and MediaTek and other companies.