Samsung is set to become a key supplier of HBM3E memory for the new AMD Instinct MI350 and MI355X accelerators. Both models will feature 12-layer stacks with a capacity of 36 GB, with the company successfully maintaining the same packaging height despite the increase in the number of layers. In parallel, Samsung is also working on HBM4 memory, which is expected to be used in the Instinct MI400 accelerators. The mass production of HBM4 is scheduled to commence at the end of the year, which could provide Samsung with an opportunity to strengthen its position and potentially challenge the leading SK hynix. The development of HBM3E and HBM4 memory by Samsung is a significant step towards the advancement of high-performance computing and could have a major impact on the industry in the years to come.